Effect of hydrogen in dilute InNxSb1Àx alloys grown by molecular beam epitaxy
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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
Photoluminescence PL has been observed from dilute InNxAs1−x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N co...
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تاریخ انتشار 2003