Author Guidelines for WOCSDICE 2010

We present a normally-off InAlN-based HEMT where we use a concept of a polarization engineering. MOCVDgrown 0.5 nm AlN/ 1 nm InAlN barrier stack is capped with a 4 nm thick undoped GaN creating a negative polarization charge at a GaN/InAlN heterojunction. Consequently, the transistor channel is depleted from carriers. On the other hand after the GaN cap is removed at access regions, the extrinsic channel becomes populated by carriers. 2 m gate length transistors with a source-to-drain distance 8 m showed a positive threshold voltage and a source drain current up-to 80 mA/mm. An off-state breakdown is close to 100 V.