Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8kV
نویسندگان
چکیده
In this paper, we demonstrate for the first time, a planar high voltage IGBT and freewheeling diode chip set with a blocking capability exceeding 8000V. The main aim is to show that a high performance IGBT can be achieved at this voltage level by implementing the “Soft-Punch-Through” (SPT) concept. Details of the IGBT and diode design and performance are presented. This includes, experimental results for the static and dynamic characteristics under normal and SOA conditions, detailed trade-off curves for a number of design parameters, and cosmic ray induced failure results for the IGBT and diode.
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تاریخ انتشار 2008