Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC
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منابع مشابه
THESIS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY Epitaxial Graphene Technology for Quantum Metrology
Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the race towards large-scale graphene electronics applications. The unique electronic properties of this system lead to a remarkably robust and accurate Hall resistance quantisation of 0.1 parts per billion, making SiC/G devices highly desirable for the endeavour of quantum resistance metrology. How...
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Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR...
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Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up to a few microns. Nevertheless, the origin of carrier scattering at the SiC vicinal steps has no...
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Top-gated epitaxial-graphene nanoribbon (GNR) field-effect transistors on SiC wafers were fabricated and characterized at room temperature. The devices exhibited extremely high current densities ( 10 000 mA/mm) due to the combined advantages of the one-dimensionality of GNRs and the SiC substrate. These advantages included good heat dissipation as well as the high optical phonon energy of the G...
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We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is prob...
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تاریخ انتشار 2015