A Complementary GaAs Microprocessor for Space Applications

نویسنده

  • Todd D. Basso
چکیده

This paper describes the development of a complementary GaAs PowerPCTM microprocessor suitable for space applications. Motorola’s 0.5μm Complementary GaAs (CGaAsTM) process was selected as the semiconductor technology because of its unique abilities to meet the requirements of space and satellite systems. Recently published findings indicate that CGaAs has a power-delay product of 0.01 μW/MHz/gate. Additionally, the CGaAs process is resistant to single-event upset (SEU) (10-9 to 10-10 upsets/bit-day), total dose radiation (108 rads), and latchup. These properties make CGaAs attractive for space and satellite applications. However, CGaAs presents design challenges such as reduced power-supply voltage, gate leakage, subthreshold drain-source leakage, and low integration level, all of which impact digital circuits. The processor architecture described in this paper is driven by the constrained integration level. Architectural simulations reveal that an acceptable level of performance can be reached by efficiently utilizing the resources available. The processor implements a small on-chip primary instruction cache and a larger off-chip primary data cache. The instruction fetch mechanism is guided by a small two-level dynamic branch prediction mechanism. Computation is performed by a small superscalar execution core. The architecture, running at 200MHz, is capable of achieving 153 MIPS, translating to a 27% performance increase over a comparable traditional pipelined microprocessor. Researchers at the University of Michigan have designed a prototype CGaAs 32-bit PowerPC microprocessor based on this architecture, which is now being fabricated. This paper will summarize the advantages and design challenges of developing a radiation-hard CGaAs microprocessor. The constraints and limitations of the technology as they affect system architecture will be discussed. Architectural features that improve the performance of the processor despite the limited integration levels will be presented.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

RF Characteristics of GaAs / InGaAsN / GaAs P

We have demonstrated a P-n-P Ga&JInGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (Vo~) that is 0.27 V lower than in a comparable P-n-p AIGaAs/GaAs HBT. The device shows nearide.al DC characteristics with a curfent gain (~) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AIGaAs/GaAs HBT, with ~~ and ~M...

متن کامل

Design of a 32 b monolithic microprocessor based on GaAs HMESFET technology

This paper examines the design of a 32-b GaAs Fast RISC microprocessor (F-RISC/I). F-RISC/I is a single chip GaAs HMESFET processor targeted for implementation on a multichip module (MCM) together with cache memories. The CPU architecture, circuit design, implementation, and testing are optimized for a seven-stage instruction pipeline implemented with GaAs super-buffered FET logic (SBFL). We ha...

متن کامل

GaAs RlSC PROCESSORS

A simplified version of a RlSC microprocessor has been implemented with E/D MESFET DCFL in the Vitesse HGaAs II process. This chip was designed to drive the development of digital GaAs design automation tools. The processor architecture was modified to fit DCFL technology. The 60,500-transistor circuit executes a set of 29 basic instructions. It dissipates 11 W and operates at over 100 MHz. The...

متن کامل

Testing of a GaAs MESFET Static RAM

This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...

متن کامل

HIGH EFFICIENCY THIN FILM GaAs SOLAR CELLS WITH IMPROVED RADIATION HARDNESS

In the present work, the performance of thin film GaAs solar cells with a mirror back contact is compared to regular GaAs cells on a substrate. A world record efficiency of 24.5% AM1.5G is obtained for a thin film cell with a gold mirror. The thin film cell thickness is only half of the regular GaAs cell thickness, which improves the radiation resistance for use in space applications and enhanc...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1998