Effects of interdiffusion on the band alignment of GeSi dots
نویسندگان
چکیده
The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperatureand excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements. © 2001 American Institute of Physics. @DOI: 10.1063/1.1405152#
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تاریخ انتشار 2001