Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65nm bulk and fully depleted silicon-on-insulator processes
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Initial Frequency Degradation and Variation on Ring Oscillators from Plasma Induced Damage in Fully-Depleted Silicon on Insulator Process
Degradations of reliability caused by plasma induced damage (PID) have become a significant concern with miniaturizing a device size. In this paper, we measure frequencies of ring oscillators with an antenna structure on a single stage. PID is relieved by connecting an antenna to a drain because charge flows to a substrate. The difference of initial frequencies is 0.64 % between structures whic...
متن کاملInitial and Long-Term Frequency Degradation on Ring Oscillators from Plasma Induced Damage in 65 nm Bulk and Silicon On Thin BOX processes
Degradation of reliability caused by plasma induced damage (PID) has become a significant concern with miniaturizing a device size. In this paper, we measure frequencies of ring oscillators with an antenna structure on a single stage. In bulk, PID is relieved by connecting an antenna to a drain because electric charge flow to a substrate. The difference of initial frequencies is 0.79 % between ...
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Body Bias (BB) control on Silicon On Insulator (SOI) mitigates power consumption on the stand-by mode. However, Negative Bias Temperature Instability (NBTI) changes by BB. We measure the NBTI of ring oscillators on thin buried oxide (BOX) fully-depleted SOI process. NBTI is suppressed and power consumption becomes lower by applying Reverse BB (RBB) because larger threshold voltage decreases car...
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تاریخ انتشار 2015