Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1d-schrrdinger-poisson Solver
نویسندگان
چکیده
We compare the numerical results for electron tunneling currents for single gate oxides, ON-and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and the modeling of electron transport in silicon.
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تاریخ انتشار 1999