Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation

نویسندگان

  • V. N. Shastin
  • E. E. Orlova
  • H.-W. Hübers
چکیده

Frequency-tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature while resonant pumping of odd parity impurity states. The threshold was about two orders of magnitude below the value for photoionization pumping. The influence of nonequilibrium intervalley TO phonons on the population of excited Bi impurity states is discussed. © 2002 American Institute of Physics. @DOI: 10.1063/1.1476955#

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تاریخ انتشار 2002