Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors

Effect of direct current sputtering power on the behavior of amorphous indium-gallium- zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

Articles you may be interested in Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors Appl. Temperature dependence of negative bias under illumination stress and recovery in amorphous indium galli...

Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors

The dielectric properties of ZrO2–Al2O3 nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors TFTs are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved per...

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

Articles you may be interested in A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress Appl. Investigation of zinc interstitial ions as the origin of anomalo...

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...