Tight-Binding based SiGe Band Structure Calculations and Implication on Transport
نویسندگان
چکیده
This work presents a comprehensive analysis of the SiGe band structure using a TightBinding based approach within the virtual crystal approximation. We analyze the material properties of bulk relaxed SiGe and biaxially compressed strained systems. The simulation approach has been benchmarked against experimental data wherever possible. We further investigate the effect of process induced uniaxial strain in <100> SiGe/Si pMOS devices. It is found that uniaxial strain can further improve the performance of biaxially compressed SiGe/Si based pMOS devices by as much as 10% for high Ge% devices. KeywordsSiGe, biaxial, uniaxial strain, bandstructure.
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تاریخ انتشار 2010