CdSxSe1-x nanocrystals grown from solid solution in silicate glass. Structural and interfacial aspects. High resolution transmission electron microscopy and optical absorption spectroscopy

CdSo~Seo.6 nanocrystals have been formed through nucleation and growth processes during heat treatments at different temperatures (T = 600, 675 and 700°C) and annealing times (t = 1 hour to 8 days). A regime of nucleation and growth seems to occur at T = 600OC. The growth process is dominant at T = 675 and 700°C. The average size of the semiconductor particles ranges between 2 and 15 nm according to the temperature and annealing time. Structural and interfacial aspects of the particles at early stages of the growth are presented here.