Communication systems today comprise the major use of GaAs technology with the highest volumes found in the cellular handset front-end. Here, heterojunction bipolar transistor (HBT) power amplifiers (PA) and Pseudomorphic High Electron Mobility Transistor (PHEMT) switches enjoy a comfortable market share. In this environment, the demands of production design require a robust CAD system with acc...

Abstarct Amplification is one of the most basic and prevalent RF/Microwave circuit functions. This paper describes the design of an 11 GHz PHEMT ATF-36077 microwave amplifier. The amplifier is manually designed using conventional technique, Smith chart was used to do a matching of the input and output of the amplifier. A completed design of the amplifier was optimised using Hewlett-Packard Adva...

Satellite-cellular convergence promises to enable higher millimetre-wave bandwidth (data rate); beamformed better signal alignment (higher system efficiency); multi-connectivity data rates); and new use cases (verticals). Harnessing these opportunities will depend on overcoming challenges spanning shorter distance/reduced coverage component complexity; construction of antenna array over-the-air...

A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DCPHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS from Silvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for highperformance digital device applications. Due to the...

in this research work, alpha particle detector is made using semi-insulating gaas. a surface barrier detector with a semi-insulating gaas substrate at room temperature with pressure of 10-4 torr under -particle radiation with 5.48 mev of am241 source, have been under investigation. energy resolution of 2 and 3 mm schottky diameter have been matured and compared with the effect of voltage varia...

A UHV atomic hydrogen-cracking cell has been constructed to produce atomic hydrogen in order to perform in-situ cleaning of semiconductor samples. The cell was calibrated and tested with the objective of cleaning the III-V semiconductor samples such as GaAs. Mass spectroscopy studies during the atomic hydrogen cleaning of the GaAs samples revealed the chemical process of the hydrogen cleaning. ...