Current driven instabilities in the collector of III–V heterojunction bipolar transistors ~HBT! are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred-electron ~Gunn–Hilsum! effect. Influence of the Kirk effect as well as conditions for oscillation are discussed. © 1995 American Institute of Phy...

The GaAs-HBT technology nowadays is a standard technology, which is readily available to circuit designers. However, while at least three highly accurate models for Si-based HBTs are available, good models for the GaAs and InP world are rare. In this documentation of the FBH HBT model, also the specific challenges in the modeling of these HBTs are highlighted.

The compact spectrometer for heavy ion experiment (CSHINE) is under construction the study of isospin chronology via Hanbury Brown–Twiss (HBT) particle correlation function and nuclear equation state asymmetrical matter. CSHINE consists silicon strip detector (SSD) telescopes large-area parallel-plate avalanche counters, which measure light charged particles fission fragments, respectively. In ...

A gain boosting method without noise-figure degradation by optimizing interstage matching in a cascode low-noise amplifier (LNA) with emitter-degeneration inductor is demonstrated at 5.2 GHz using 2m GaInP/GaAs HBT technology. A low-pass LC matching network is inserted in the interstage of a conventional cascode LNA with emitter-degeneration-inductor to enhance the gain with the same current co...

Multi-finger power SiGe heterojunction bipolar transistors (HBTs) with emitter ballasting resistor and non-uniform finger spacing are fabricated, and temperature profiles of them are measured. Experimental results show that both of them could improve the temperature profile compared with an HBT which has uniform finger spacing. For the HBT with emitter ballasting resistor, the ability to lower ...

The RF power amplifier (PA) is one of the critical components in the 802.11 transceivers, and it is expected to provide a suitable output power at a very good gain with high efficiency and linearity. However, present-day telecommunication device technology is not well suited to the requirements of optical data communication. Digital CMOS is the most used technology in RF applications, nowadays;...