نتایج جستجو برای: etching time
تعداد نتایج: 1900968 فیلتر نتایج به سال:
Solid State Nuclear Track Detectors (SSNTDs) are well known for the detection of ionizing radiation through track formation of heavy ionizing particles. The LR-115 detector is a commonly used SSNTD for the detection and measurement of Rn and its progeny. Several techniques of track revelation are known but, the chemical etching technique is the most frequently used in which tracks can be made v...
Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as consequence of the differences in their manufacturing processes e.g. different etching times. We have made simulations examining how the etching quality reflec...
A new mathematical model based on the total concentration approach is proposed for modeling wet chemical etching process. The proposed mathematical model is a fixed domain formulation of the etching problem. The governing equation based on the total concentration includes the interface condition too. The total concentration of etchant includes the reacted and the unreacted concentration of etch...
Plasma etching processes have a potentially large number of sensor variables to be utilized, and the number of the sensor variables is growing due to advances in real-time sensors. In addition, the sensor variables from plasma sensors require additional knowledge about plasmas, which becomes a big burden for engineers to utilize them in this filed. Thus an effective procedure for sensor variabl...
OBJECTIVES The aim of this in-vitro study was to assess the thermal effect of light emitting diode (LED) light curing unit on the enamel etching time. MATERIALS AND METHODS Three treatment groups with 15 enamel specimens each were used in this study: G1: Fifteen seconds of etching, G2: Five seconds of etching, G3: Five seconds of etching plus LED light irradiation (simultaneously). The micro ...
Anisotropic etching of silicon in potassium hydroxide (KOH) is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this residue as a second masking layer to fabricate two-layer complex structures. Square patterns with size in the range of 15–150 μm and gap distance of ...
High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resista...
The effect of radio frequency ~rf! bias frequency on SiO2 feature etching using inductively coupled fluorocarbon plasmas is investigated. It is found that the rf bias frequency can have an important effect on SiO2 feature etch rate, microtrenching phenomena, and SiO2-to-photoresist etch selectivity. In addition, the effect of rf bias pulsing on inductively coupled fluorocarbon plasma SiO2 etchi...
The purpose of this study was to characterize the etching mechanism, namely, the etching rate and the activation energy, of a titanium dental implant in concentrated acid and to construct the relation between the activation energy and the nanoscale surface topographies. A commercially-pure titanium (CP Ti) and Ti-6Al-4V ELI surface were tested by shot blasting (pressure, grain size, blasting di...
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