نتایج جستجو برای: etching time

تعداد نتایج: 1900968  

Journal: :Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 2015

Introduction: Dental ceramics are considered as materials that can restore the appearance of natural teeth. Etching the inner surface of a ceramic restoration with hydrofluoric acid (HF) followed by using a silane coupling agent is a well-known and recommended method to increase the bond strength. The aim of etching on ceramic structure is to enhance the surface roughness (Ra) and energy and to...

ژورنال: سنجش و ایمنی پرتو 2015

In this paper, application of the CR-39 passive nuclear track detector for spectrometry of alpha particles is investigated. To this end, a standard Am-241 source as the alpha radiation source, and brass collimators with different heights for energy determination of alpha particles were utilized. The detectors were irradiated by alpha particles in the energy range of 0.8 to 4.8 MeV and then were...

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

M. Farangi M. H. Pakzamir M. Zahedifar

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...

Journal: :journal of dentistry, tehran university of medical sciences 0
mahshid mohammadi basir shahed university mohammad bagher rezvani shahed university elham tabatabai ghomsheh zahra malek hosseini

objectives: this study aimed to determine the effect of surface treatments such as tooth reduction and extending the etching time on microtensile bond strength (µtbs) of composite resin to normal and fluorotic enamel after microabrasion. materials and methods: fifty non-carious anterior teeth were classified into two groups of normal and fluorotic (n=25) using thylstrup and fejerskov index (tfi...

F. Alfeel, F. Awad F. Qamar I. Alghoraibi

Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

Journal: :international journal of nanoscience and nanotechnology 2007
n. jeyakumaran b. natarajan s. ramamurthy v. vasu

porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. sem, ftir and pl have been used to characterize the morphological and optical properties of porous silicon. the influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. it is observed that pore size increases with etching tim...

F. Alfeel, F. Awad F. Qamar I. Alghoraibi

Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

Journal: :international journal of nanoscience and nanotechnology 2013
m. zahedifar m. farangi m. h. pakzamir

silicon nanowire (sinw) arrays were produced by electroless method on polycrystalline si substrate, in hf/ agno3 solution. although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. in order to study the influence of etching time (which affects the sinws length) on d...

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