Microfabricated semiconductor devices are essential components of many biochemical sensors today, and show great potential for advanced devices in the future. Since the proposal of an pH sensitive device, based on the technology of field effect transistors, was made in the early seventies, these so called ISFETs have been of great interest for the application in chemical and biological sensing ...

Solid-state silicon detectors are challenging devices for microdosimetry, mainly because they can provide sensitive zones (i.e. depletion layers) of the order of a micrometer. This type of detector can be realized by placing a tissueequivalent converter in contact with a silicon device. A semiconductor microdosimeter is characterized by a high spatial and a good energy resolution and could be u...

The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to...

We present a new magnetoelectronic device consisting of a mm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B'(r), which induces a Hall resistance, RH , in the microjunction. External...

The development and optimization of Silicon technology has been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the International Technology Roadmap for Semiconductor (ITRS). With the trend of scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistor as Moore’s Law [2] requires replacement of conventional silicon dioxide layer with the ...

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contra...

We present an overview of negative bias temperature instability ~NBTI! commonly observed in p-channel metal–oxide–semiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit performance and review interface traps and oxide charges, their origin, present understanding, and changes due to NB...

OVERVIEW: Silicon semiconductor (MOSFET: metal-oxide semiconductor field-effect transistor) dimensions are approaching the nanometer scale. The gate electrode size has already been reduced to 50 nm or less for the most advanced 90-nm technology nodes, and for the 65-nm nodes the size is expected to be 25 nm. A new guideline to replace the scaling rule is needed, and making use of the strain eff...