نتایج جستجو برای: field effect semiconductor device

تعداد نتایج: 2898443  

and S. Mirzakuchaki, Gh. R. Karimi,

During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design ...

2018
Jingjing Chang Zhenhua Lin Chunfu Zhang Yue Hao

Organic field-effect transistors have received much attention in the area of low cost, large area, flexible, and printable electronic devices. Lots of efforts have been devoted to achieve comparable device performance with high charge carrier mobility and good air stability. Meanwhile, in order to reduce the fabrication costs, simple fabrication conditions such as the printing techniques have b...

Journal: :Advanced materials 2010
Sylvain Danto Fabien Sorin Nicholas D Orf Zheng Wang Scott A Speakman John D Joannopoulos Yoel Fink

The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is d...

2016
Akito Kuramata Hisashi Murakami Yoshinao Kumagai Masataka Higashiwaki Kohei Sasaki Akinori Koukitu Takekazu Masui Shigenobu Yamakoshi

This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses excellent material properties, in particular for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured from a single-crystal bulk synthesized by melt–growth me...

2014

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

2014

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

2010
Alicja Konczakowska Bogdan M. Wilamowski

Noise (a spontaneous fluctuation in current or in voltage) is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. The resulted noise, as a superposition of different noise sources, is defined as an inherent noise. The equivalent noise models (containing all noise sources) are created for a parti...

2006
Yiming Li Cheng-Kai Chen

In this paper, a distributed simulation-based computational intelligence algorithm for inverse problem of nanoscale semiconductor device is presented. This approach features a simulation-based optimization strategy, and mainly integrates the semiconductor process simulation, semiconductor device simulation, evolutionary strategy, and empirical knowledge on a distributed computing environment. F...

2012
Jinhua Li Jun Du Jianbin Xu Helen L. W. Chan Feng Yan

Related Articles Cell viability studies and operation in cellular culture medium of n-type organic field-effect transistors J. Appl. Phys. 111, 034702 (2012) Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors APL: Org. Electron. Photonics 5, 40 (2012) Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si met...

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