We report high quality graphene and WSe2 devices encapsulated between two hexagonal boron nitride (hBN) flakes using a pick-up method with etched hBN flakes. Picking up prepatterned hBN flakes to be used as a gate dielectric or mask for other 2D materials opens new possibilities for the design and fabrication of 2D heterostructures. In this Letter, we demonstrate this technique in two ways: fir...

The effect of electrically active VGa–ON threading edge dislocations on drift and Hall mobilities in n-type epitaxial wurtzite WZ GaN is investigated theoretically. The charge distribution along the dislocation core is first obtained by means of a density-functional theory atomistic calculation; the two N atoms near the missing Ga atom at the dislocation core are found to be electron acceptors....

The effects of fluorine ion bombardment on the channel transport properties of AlGaN /GaN heterostructures have been investigated. Ion bombardment of the heterostructure was carried out within a CF4 plasma in a reactive ion etching system at various self-bias voltages. Hall mobility and sheet electron concentration for the two-dimensional electron gas showed strong dependence on bombardment dur...

Graphene is a promising material for applications in aqueous electrolyte environments. To explore the impact of such environments on graphene’s electrical properties, we performed Hall bar measurements on electrolyte-gated graphene. Assuming a Drude model, we find that the room temperature carrier mobility reaches 7,000 cm 2 /Vs, the highest mobility recorded for graphene in an aqueous electrol...

Recently proposed thermoelectric applications of quantum dot superlattices made of different material systems depend crucially on the values of the electrical and thermal conductivities in these nanostructures. We report results of the measurements of Hall mobility and thermal conductivity in a set of Ge0.5Si0.5/Si quantum dot superlattices. The average measured in-plane Hall mobility for the u...

We study the nu=1/3 quantum Hall state in the presence of random disorder. We calculate the topologically invariant Chern number, which is the only quantity known at present to distinguish unambiguously between insulating and current carrying states in an interacting system. The mobility gap can be determined numerically this way and is found to agree with experimental value semiquantitatively....

We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb well, using dual-gated Hall-bar device allowing for independent control vertical electric field and density. At magnetic 24 T, we observe FQH states at several filling factors, namely $\ensuremath{\nu}=5/3, 2/3$, $1/3$, addition $\ensuremath{\nu}=4/3$ previously...

The paper describes one of the methods investigation galvanomagnetic phenomena compound thin film semiconductor system AIVBVI. resulting current-voltage characteristics films PbTe: Sb and analyzed basic parameters for different thicknesses using method Hall. dependence thickness PbTe:Sb on mobility concentration major carriers.

The paper describes one of the methods investigation galvanomagnetic phenomena compound thin film semiconductor system AIVBVI. resulting current-voltage characteristics films PbTe: Sb and analyzed basic parameters for different thicknesses using method Hall. dependence thickness PbTe:Sb on mobility concentration major carriers.

InXGa1 XSb has the highest hole mobility amongst all III–V semiconductors which can be enhanced further with the use of strain. The use of confinement and strain in InXGa1 XSb quantum wells lifts the degeneracy between the light and heavy hole bands which leads to reduction in the hole effective mass in the lowest occupied band and an increase in the mobility. We present magnetotransport measur...