This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...

This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...

The calculated electron Hall Mobility and Hall scattering factor in n-type 6H-SiC based on numerical solutions to the Boltzmann transport equation are presented. These results were obtained by solving the Boltzmann equation exactly for the electron Hall mobility using the contraction mapping principle and the electron drift mobility with Rode’s iterative method. The relative importance of the v...

Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 10 13 cm -2 with a peak Hall mobility of 42.4 cm 2 .V -1 .s -1 . Coulomb scattering as dominant sc...

Hall bars were fabricated on epitaxial graphene formed on 4H-SiC{0001} under various growth environments. Subsequently, they were analyzed via electrical characterization, atomic force microscopy (AFM), Raman mapping, and transmission electron microscopy (TEM) with emphasis on the C-face. The results of the measurement techniques were then corroborated to find correlations. It was found that th...

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors...

Hall mobility of the two dimensional electron gas in GaN quantum wells are calculated in the temperature range 1K-14K incorporating deformation potential acoustic, piezoelectric, background and remote ionized impurity scatterings. The Boltzmann transport equation is solved by a numerical iterative technique using Fermi-Dirac statistics. The variations of longitudinal magnetoresistivity with mag...

For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the re...

We report on a measurement of excess electron drift properties in liquid argon in the presence of crossed electric and magnetic fields. The electric field strength was varied between 6 and 110 V/cm. Using a superconducting solenoid magnetic field strengths up to 5 T were achieved. The mag_netic field 8 was oriented perpendicular to the electric field E and the components of the drift velocity G...

We report our studies on the superconducting and normal-state properties of metallic YBa2Cu3Ox thin films (Tc,mid ≈ 52 K) exposed to long-term white-light illumination (photodoping). It was observed that the effects of photoexcitation strongly depended on the temperature at which the photodoping was performed. At low temperatures, both the Hall mobility and the Hall number were photoenhanced, w...