نتایج جستجو برای: heterojunction field
تعداد نتایج: 793018 فیلتر نتایج به سال:
Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor
Matching matters when building supramolecular n/p-heterojunction photosystems on solid supports that excel with efficient photocurrent generation, important critical thickness, smooth surfaces, and flawless responsiveness to functional probes for the existence of operational intraand interlayer recognition motifs. BHOSALE, Rajesh Shivajirao, et al. Topologically Matching Supramolecular n/p-Hete...
Abstract Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In specific van heterojunction, the band alignment engineering is crucial and feasible to realize high performance multifunctionality. Here, we design ferroelectric-tuned heterojunction device structure by integrating GeSe/MoS 2 VHJ poly (vinylidene fluoride-trifl...
this research study aimed to investigate the relationship between field-dependence/independence cognitive style and vocabulary learning strategies among iranian efl learners. ninety participants majoring in english translation at arak university were chosen. the participants were classified into two groups of field-dependent and independent based on the results of group embedded figure test (ge...
This study investigated theoretical photoinduced charge transport in a bulk heterojunction (BHJ) solar cell controlled by an external electric field. Our method for visualizing charge difference density identified the excited state properties of photoinduced charge transfer, and the charge transfer excited states were distinguished from local excited states during electronic transitions. Furthe...
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band o...
Exciton dissociation in a donor-accepter polymer heterojunction has been simulated using a nonadiabatic molecular dynamics approach, which allows for the coupled evolution of the nuclear degrees of freedom and the electronic degrees of freedom described by multiconfigurational electronic wavefunctions. The simulations reveal important details of the charge separation process: the exciton in the...
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a conjugated wire. The calculated results show the enhancement or depletion mode of a transistor by applying a gate field a...
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