This work evaluates the features of a galliumarsenide E/D MESFET process in which a 32-b RISC microprocessor was implemented. The design methodology and architecture of this prototype CPU are described. The performance sensitivity of the microprocessor and other large circuit blocks to different process parameters is analyzed, and recommendations for future process features, circuit approaches,...

This paper presents a novel device called Field Effect Photodiode (FEPD) to overcome the inherent drawbacks of PIN (PIN-PD) and control output photocurrent. Also, proposed PIN-PD can be applied as fast optical switch that provides desired ION/IOFF ratio for applications in nanoscale regime. The combines Metal Semiconductor Transistor (MESFET) regular convert incident light with photon energy gr...

The Screen-Grid Field Effect Transistor (SGrFET) is a planar MOSFET-type device with a gating configuration consisting of metal cylindrical fingers inside the channel perpendicular to the current flow. The SGrFET operates in a MESFET mode using oxide insulated gates. The multi-gate configuration offers advantages for both analog and digital applications, whilst the gate cylinder holes can be ex...

This paper presents the characterization of illuminated high-frequency active devices using a time domain physical simulation model. The model is based on Boltztnann’s Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent camer density ch...

A quasi-optical method for solid-state power-combining is discussed, with application to high-power millimeter-wave generation. The approach uses two-dimensional planar arrays of coupled oscillators. These arrays are distinguished by the strength of the coupling, which is limited to weak interactions. This simplifies both the analysis and design of the arrays. A theoretical description of the c...

This paper overviews the microwave device modeling techniques based on machine learning. The proposed methods are divided into two categories, active and passive components modeling. These modeling techniques aim to characterize the microwave device efficiently and accurately. The active components consist of MESFET, HEMT, pHEMT, and so on. The passive devices include inductor, capacitor, Lange...

Finite Element Time Domain Method is used to determine the intrinsic elements of a broadband small-signal equivalent circuit (SSEC) of FET’s. The values of the differents elements are calculated from the Y parameters of the intrinsic MESFET, which are obtained from the Fourier analysis of the device transient reponse to voltage-step perturbations at the drain and gate electrodes. The success of...

The numerical simulation of a GaAs MESFET device on a transputer-based parallel system is presented. The physical modelling consists of a comprehensive two-dimensional energy transport model taking into account thermal heating effects within the device lattice. The semiconductor equations were solved by an SOR point iterative method using a finite difference discretisation scheme. Algorithms ta...

This paper presents a new procedure to design of high efficiency class E power amplifiers (PAs) using nonlinear transistors. The active device (MESFET-ATF34143) has been investigated and load harmonic networks have also been designed to match the requirement. By using the new procedure, the power added efficiency (PAE) of PAs could be increased to over 70%. The effect of the stabilized resistor...