This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...

i ABSTRACT The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. T...

GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 6...

Analytical results have been presented for an optically illuminated InGaAs MESFET with opaque gate. The excess carriers due to photo generation are obtained by solving the continuity equation. The energy levels are modified due to generation of carriers. The results of I–V characteristics under dark condition and under illumination have been compared and contrasted with the GaAs MESFET.

The mesh size convergence rate of the finite element method in two-dimensional GaAs MESFET simulation has been investigated numerically. The equations governing MESFET operation and the finite element formulation of these equations are summarized. The presence of corner singularities at the gate contact endpoints is noteworthy. for such singularities are known to determine the convergence rate ...

A modified genetic algorithm is presented for parameter extraction of small signal equivalent of microwave power GaAs MESFET. A new approach of genetic algorithm-based model in the paper is applied to determine the equivalent circuit elements of GaAs MESFET directly from measured S-parameters biased in the active region. The results of calculation show that the method presented is suitable for ...

This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

This paper describes a high-speed GaAs MESFET digital IC design for optical communication systems. We propose novel circuit configurations of a selector and a static delayed flip-flop which are key elements to perform high-speed digital functions. Employing these new design, the selector IC and static decision IC fabricated with 0.12-μm GaAs MESFET operated up to 44 Gbit/s and 22 Gbit/s, respec...

This paper presents a new large-signal nonlinear model for the GaAs MESFET triode and saturation zones. The model is specially tailored for simulating nonlinear distortion of RF circuits, in which the active device is biased in those regions. This new model will be compared to similar results obtained from a previously presented model and to real measurements of a microwave MESFET from Microwav...