(RGD) circuits operating in very high frequency (VHF) switching is discussed. The specific RGD circuits are normally applied only for certain applications due to their design limitations and drawbacks. The isolation techniques must be considered to avoid mismatch and interruption of signals as well as the dead time delay, size of components and choice of optimized parameter values. Low conducti...

We investigate the role of the quantum-mechanical space-quantization effects on the operation of a 50 nm MOSFET device, an asymmetric 250 nm FIBMOS device and a narrow-width SOI device structure. We find that space-quantization effects give rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in both the regular and the asymmetric MOSFET...

A spin metal-oxide-semiconductor field-effect transistor spin MOSFET , which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict that this device should display a very high magnetoresistance MR ratio between the cases of parallel and antiparallel magnetizations for the case of half-metal...

The silicon carbide (SiC) power MOSFET is a promising solution for electronics applications demanding high energy efficiency and density. For high-current applications, typically several transistors are operated in parallel, requiring synchronous switching. Commercial SiC MOSFETs may, however, still show significant performance spread turn-on electrical behavior and, hence, lifetime such system...

In this paper, variability analysis of a graded-channel dual-material (GCDM) double-gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed using Sentaurus TCAD. By varying the different device parameters, proposed GCDM-DG s-Si respect to variations in threshold voltage, drain current, and short-channel effects as line edge roughness fluctuations random dopant, contact resistanc...

Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with ’nanowire channel’ is being considered as one feasible enabler of MOSFET scaling to end-ofroadmap. Alongside classical CMOS or Moore’s law scaling, many novel device proposals exploiting nanoscale phenomena have been made either. Single Electron Transistor (SET), with its u...

We present an analytical and continuous dc model for undoped cylindrical surrounding double-gate (CSDG) MOSFETs for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified charge control model developed for thi...

a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...

GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, frequency, and anti-radiation ability. Research on total ionizing dose annealing effects E-mode Cascode has been carried out. The device consists of a low-voltage MOSFET high-voltage depletion-mode MISHEMT. both conventional processed radiation-hardened fabricated observe the TID effects. ...