In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have bee...

in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasit...

According to Moore’s law, the number of transistor embedded on integrated circuit (IC) doubles approximately every two years. Thus, the size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has to be scaled down as an increase in packing density. In current technology, the size of a transistor has shrunk below 45nm, and it has already reached its physical limit. Any attempt to shri...

This paper present an extensive review of homogeneously doped Junctionless Cylindrical Gate All Around (JL-CGAA) MOSFET using numerical simulations to look into deep physical insight of the device. The electrical and analog/RF performance has been investigated. The JL-C-GAA FET is more immune to short channel effect than the devices having p-n junctions. It also offers steeper subthreshold slop...

In this paper, we report the effect of luminous behaviour of transparent gate Recessed Channel MOSFET (RC-MOSFET).Aggressive scaling is associated with a number of higher order effects such as short channel effects, hot carrier effects and heating effect which significantly affect the device performance. The Ray trace method in MOSFET has emerged to be the ultimate solution. The proposed device...

We report the integration of a MOSFET with a field emission arrays to obtain low voltage switching and more stable emission in field emission devices. Instead of the traditional feedback resistor stabilization in the emitter circuit, a MOSFET is used as a voltage controlled current source thereby stabilizing the emission current and resulting in low voltage switching. In this device, the emitte...

The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering ...

The static characteristics of CREE 1200V/100A 4H-SiC MOSFET have been fully characterized at temperatures ranging from 0°C to 150°C. The distinct characteristics of high power SiC MOSFET compared with the silicon counterparts are analyzed and explained. A novel physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER software to expres...