This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...

We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; ev...

This article reports a new integration approach to produce arrays of ZnO microcrystals for optoelectronic and photovoltaic applications. Demonstrated applications are n-ZnO/p-GaN heterojunction LEDs and photovoltaic cells. The integration process uses an oxygen plasma treatment in combination with a photoresist pattern on magnesium doped GaN substrates to define a narrow sub-100 nm width nuclea...

Local vibrational modes ~LVMs! are reported for Mg-doped GaN grown by metalorganic chemical vapor deposition. Hetero-epitaxial layers of GaN:Mg, either as-grown, thermally activated, or deuterated, were investigated with low-temperature, Fourier-transform infrared absorption spectroscopy. The as-grown material, which was semi-insulating, exhibits a LVM at 3125 cm. Thermal annealing increases th...

We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p-n junction core/shell nitride nanowires. GaN nanowires containing seven radial In0.2Ga0.8N/GaN quantum wells were grown by metal-organic chemical vapor deposition on a sapphire substrate by a catalyst-free approach. To fabricate the flexible LED, the nanowires are embedded into a phosp...

Current-injected 1.54 m emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 m emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped...

The adsorption of hydrogen sulfide molecule on undoped and N-doped TiO2/Au nanocomposites was investigated by density functional theory (DFT) calculations. The results showed that the adsorption energies of H2S on the nanocomposites follow the order of 2N doped (Ti site)>N-doped (Ti site)>Undoped (Ti site). The structural properties including bond lengths, angles<span id="...

The performance of devices fabricated from GaN and related compounds is strongly affected by the resistances caused by electrical contacts. To avoid excessive heating resulting in a failure of the device, speciŽc contact resistances less than ,10 Wcm for light-emitting diodes (LEDs) and less than ,10 Wcm for laser diodes are required. This applies in particular to ohmic contacts on p-doped GaN ...

Record-low sheet-resistance of $ 128 O=sq have been obtained in two-dimensional electron gases at ultrathin single AlN/GaN heterojunctions by optimizing the metal fluxes used in molecular beam epitaxy growth. Multiple 2DEGs have been found in AlN/GaN superlattices, with the net electron density measured 4 1 Â 10 14 cm À2 at room temperature. This very high electron density also leads to a furth...

In this study, we systematically investigated the structural and magnetic properties of group-IV-doped monolayer GaN by first-principles calculations. Among group-IV element, only Ge Sn atoms with large atomic radii can form a buckling substituted doping structure an in-plane moment 1 μB per dopant. The compressive strains enhance anisotropy, while tensile tend to destroy dopants. Both stay on ...