Driven by the wireless handset market the GaAs industry has seen an immense growth in recent years. The wireless markets will continue to grow. In addition an emerging mmW market with applications in automotive, defense and optoelectronics will further drive the demand for GaAs components. The two biggest European GaAs foundries, Filtronic and UMS, are very well positioned to address globally t...

—This paper presents the design of a highly linear broadband power amplifier (PA) operating from 200MHz to 3GHz for Long Term Evolution (LTE) pico-cell base station. The monolithic microwave integrated circuit (MMIC) PA is realized with 0.25-μm Enhancement Mode Pseudomorphic High Electron Mobility Transistor (E-pHEMT) process. The broadband PA employs a novel dual feedback technique to achieve...

In this paper, a one quadrant simultaneous phase/gain control is proposed as a basic unit of an active reflectarray. Perpendicular polarizations in a square patch have been employed for receiving and retransmitting the signal. Its desired phase and gain values have been obtained by means of an adequate biasing of two in quadrature amplifying branches. As an adequate linearity must be assured in...

We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and fmax values. This result was obtained by improving short-channel effects through widening of the siderecess spacing (Lside) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in Rs and Rd due to Lside widening, we optimi...

This paper describes a 2.4-GHz fully-integrated front-end receiver including single-pole triple-throw (SP3T) switch and low-noise amplifier (LNA) with bypass function, which was fabricated in 0.25 μm GaAs pHEMT process. An asymmetrical SP3T architecture is incorporated to enable the operate four modes. The exploration of impedance voltage gain behavior proposed LNA help establish matching netwo...

An experiment has been devised which will validate, in space, a miniature, high-performance receiver. The receiver blends three complementary technologies: high temperature superconductivity (HTS), pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuits (MMIC), and a miniature pulse tube cryogenic cooler. Specifically, an HTS band pass filter, InP MMIC l...