Received May 19, 2017 Revised Nov 14, 2017 Accepted Nov 16, 2017 An optimized empirical modelling for a 0.25μm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and rel...

AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

High electron mobility transistors (HEMTs) based on III–V semiconductor materials have been investigated as these devices are scaled down to gate lengths of 120, 90, 70, 50 and 30 nm. A standard Monte Carlo (MC) method coupled with the solution of Poisson’s equation is employed to simulate a particle transport. The average particle velocity and the field–momentum relaxation time are studied in ...

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fi...

neural network algorithms have been applied to a variety of areas of engineering and microwave structures. Neural networks are also able to model nonlinear relations between different data sets. Owing to this feature, an introduced neural network model (INN) based on particle swarm optimization (PSO) training algorithm (INN-PSO) is presented for pseudomorphic high electron mobility transistor (...

A low phase noise, low dissipated power and small sized Ka-band voltage-controlled oscillator (VCO), using dual cross-coupled pair configuration and capacitance-splitting technique is presented. The Ka-band VCO circuit uses 0.15 μm GaAs pHEMT technology. The VCO has low phase noise, of 116.36 dBc/Hz, at a 1 MHz offset and can be tuned from 30.5 to 31.22 GHz. The figure of merit (FOM) is -192.36...

A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry it based pHEMT varactors order to achieve a very small chip size. 0dBm-output power over the entire tuning range 27.67 GHz 28.91 GHz, phase noise of -96.274 dBc/Hz -116.24 at 1 10 MHz offset f...

Abstarct Amplification is one of the most basic and prevalent RF/Microwave circuit functions. This paper describes the design of an 11 GHz PHEMT ATF-36077 microwave amplifier. The amplifier is manually designed using conventional technique, Smith chart was used to do a matching of the input and output of the amplifier. A completed design of the amplifier was optimised using Hewlett-Packard Adva...

Approach: Wafers and Products The BiHEMT process architecture is a hybrid GaAs/InGaP HBT process co-integrated with an optically-defined 0.7 um gate, InGaP etch-stop, pseudomorphic high electron mobility (pHEMT) process. Both enhancement-mode and depletionmode pHEMT transistors are available. This process offers both power amplifier and RF switch capability, as well as low-noise performance to ...

The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 10 12 cm -2 and an AlAs/GaAs spacer. Such were used fabricate monolithic integrated circuits single-pole double throw switches with gate length width 0.5 μm 100 μm, respectively. resulting had following parameters: g max =400 mS/mm, saturation curren...