aims: most of the world population who is at work and production age does not have appropriate and regular physical activity for various reasons. accordingly, the researchers tried to evaluate the effect of physical activity predictors of employees through the path analysis based on the pender's health promotion model (hpm). methods and materials: we conducted this study on 359 employees of the...

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite element method is used to model realistic device geometries and to calc...

AbstructThe electrical characteristics of modern VLSI and ULSI device structures may be significantly altered by self-heating effects. The device modeling of such structures demands the simultaneous simulation of both the electrical and the thermal device behavior and their mutual interaction. Although, at present, a large number of multi-dimensional device simulators are available, most of the...

In recent years, many methods have been proposed for the spectral-based characterization of inkjet printers. To our knowledge, the majority of these are based on a physical description of the printing process, employing different strategies to deal with mechanical dot gain and the physical interaction among inks. But our experience tells us that as printing is a physical process involving a lar...

A middleware for real ad-hoc cooperation of distributed device ensembles must support self-organization of its components. Self-organization means that the independence of the ensembles’ components is ensured, that the ensemble is dynamically extensible by new components and that real distributed implementation is possible. Furthermore the data-flow of messages within the ensemble may not be st...

Surface-potential-based MOSFETmodeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, the first self-consistent surface-potential model for circuit simulation based on the drift-diffusion approximation and charg...

Robust, high yield IC design requires statistical simulation, and therefore statistical models. Simple “fast” and “slow” sets of model parameters are not sufficient to predict the manufacturing variations of all measures of circuit performance for arbitrary circuit topologies, device geometries, and biases. This paper describes an accurate and efficient approach to statistical modeling and char...

This paper proposes a new EMG-controlled pointing device using a novel statistical neural network. This device can be used as an interface tool for wearable computers since it does not restrict the operator to being in front of computer devices such as a keyboard or a mouse. The distinctive feature of this device is that we adopt a statistical neural network, which includes a continuous density...

A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled S-parameters fit the measured ones well without any optimizati...