This paper develops the technologies of mechanical characterization of CMOS-MEMS devices, and presents a robust algorithm for extracting mechanical properties, such as Young's modulus, and mean stress, through the external electrical circuit behavior of the micro test-key. An approximate analytical solution for the pull-in voltage of bridge-type test-key subjected to electrostatic load and init...

Dynamic CMOS logic circuits are used in high performance VLSI chips in order to achieve very high system performance. These circuits requires less number of transistors as compare to CMOS logic circuits Dynamic logic circuits are much affected by noise as compared to static CMOS circuit. This is due to the fact that dynamic logic circuits have lower value of switching threshold voltage, which i...

Jump and pull-in instability are common nonlinear dynamic behaviors leading to the loss of performance reliability structural safety electrostatic micro gyroscopes. To achieve a better understanding these initial-sensitive phenomena, dynamics gyroscope system considering nonlinearities stiffness forces explored from global perspective. Static analyses performed estimate threshold detecting volt...

For different metals and varying geometries, this paper presents simulations of electrostatically actuated MEMS cantilevers regarding their influence on pull-in voltage actuation speed. Three-dimensional electromechanical modeling including many non-linearities has been performed to study some static but mainly dynamic features. The results show that the involved parameters have influences spee...

A novel topology, Current-Sourcing Push-Pull Parallel-Resonance Inverter (CS-PPRI) was investigated theoretically and experimentally. The proposed power stage is built around a current fed push pull inverter. The main features of the proposed inverter is a load independent output current and Zero Voltage Switching (ZVS). It is suggested that the proposed CS-PPRI is a viable al ternat ive for re...

Micromechanical structures have been designed, fabricated in silicon and tested for use as on-chip voltage reference. Applications are in electrical metrology and in integrated silicon microsystems. Microbeams of 100 μm length, 3 μm width and 11μm thickness are electrostatically actuated with a very reproducible pull-in voltage at 9.1 V. Devices demonstrated an initial drift of -12 mV over 10 d...

Electrostaticmicroelectromechanicalsystems (MEMS) actuators suffer from an instability called pull-in, wherein the movable electrode snaps onto fixed beyond a certain applied voltage. Thus, entire allowed range is not utilized for stable operation. We propose pull-in free, low-voltage operation by using cubic nonlinear spring with ferroelectric negative-capacitance hybrid MEMS actuator. use phy...