With the advancement of nanoscale semiconductor technology,semiconductor optical amplifiers are used to amplify and process all-optical signals. Inthis paper, with the aim of calculating the gain of quantum dot semiconductor opticalamplifier (QD-SOA), two groups of rate equations and the optical signal propagatingequation are used in the active layer of the device. For t...

In this paper, we report a failure case of blue LEDs returned from a field application, and propose a practical way to identify the physical and structural reasons for the observed malfunction by a combination of different electron microscope techniques. Cathodoluminescence imaging and electron beam induced current (EBIC) imaging are employed in order to visualize conductive paths through the d...

MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the form...

The main aim of this investigation is to assess the suitability of modern power semiconductor devices for pulse power applications. Pulse power system involves the storage of energy, which is released in form of high power pulse to the load by means of a switching device. Hence the basic components of pulse power system are an energy storage element, a switch, and a load circuit. The energy sto...

As GaN power device technology matures and gains acceptance in the market place, suppliers who provide products using this promising technology must prove its reliability. This paper will provide an overview of the testing approaches used to establish failure rates and will provide a comparison of DC and RF based HTOL methods. The primary focus of this paper will be the high power RF HTOL test ...

Soft error rate (SER) testing and measurements of semiconductor circuits with different operating voltages and operating conditions have been performed using the thermal neutron beam at the Radiation Science and Engineering Center (RSEC) at Penn State University. The high neutron flux allows for accelerated testing for SER by increasing reaction rate densities inside the tested device that give...

Organic field-effect transistors have received much attention in the area of low cost, large area, flexible, and printable electronic devices. Lots of efforts have been devoted to achieve comparable device performance with high charge carrier mobility and good air stability. Meanwhile, in order to reduce the fabrication costs, simple fabrication conditions such as the printing techniques have b...

• Demonstration of an enhancement in the modulation bandwidth from 16 GHz to 28 GHz in an injection locked semiconductor laser with a coincident reduction in parasitic chirp. • Demonstration of room-temperature, continuous-wave operation of the first bipolar cascade laser. This laser demonstrated an internal efficiency of 150% and a measured external modulation efficiency of 99.3%. Continuous-w...

One-dimensional nanowires (NWs) are promising materials for future nanodevices owing to their small dimensions and novel properties. After ten years of materials optimization [1], it is now possible with the help of X-rays and synchrotron radiation to draw some preliminary conclusions about the structural requirements necessary to tune the physical properties of demanding devices in terms of st...