As the dominating CMOS technology is fast approaching a “brick wall,” new opportunities arise for competing solutions. Nanoelectronics has achieved several breakthroughs lately and promises to overcome many of the limitations intrinsic to current semiconductor approaches. Most of the results in this area reported until now focus on devices and interconnect; this work goes several steps further ...

In this work, we investigate the charging and reliability of interlayer dielectric materials that are used in the fabrication process of advanced RF-MEMS switches. In particular, the charge stored on the surface of a dielectric and the dynamic of this charge at Nanometric scale are studied. More attention is given to the decay of the deposited charge by a variety of means: (1) surface conductio...

Two-photon absorption, 2PA, in semiconductors is enhanced by two orders of magnitude due to intermediate-state resonance enhancement, ISRE, for very nondegenerate (ND) photon energies. Associated with this enhancement in loss is enhancement of the nonlinear refractive index, n2. Even larger enhancement of three-photon absorption is calculated and observed. These large nonlinearities have implic...

The graphene nano-electro-mechanical switches are promising components due to their outstanding switching performance. However, most of the reported devices suffered from a large actuation voltages, hindering them from the integration in the conventional complementary metal-oxide-semiconductor (CMOS) circuit. In this work, we demonstrated the graphene nano-electro-mechanical switches with the l...

Recent consideration of spin based quantum computation, optical switches, magnetic memory cells, etc. [1] mandates an improved understanding of spin dynamics and, in particular, the spin relaxation rate [2]. The most promising materials for device purposes, III-V and II-VI compounds, have been shown [3] to have spin relaxation rates dominated by the D’yakonov-Perel’ (DP) mechanism at moderate t...

The medium voltage DC (MVDC) type system can connect multiple terminals to a common MVDC bus, so it is possible several renewable power sources the but circuit breaker needed isolate short accidents that may occur in bus. For this purpose, concept of hybrid takes advantage low conduction loss contact switch and an arcless-breaking semiconductor has been proposed. During break switch, dedicated ...

This paper presents a novel device called Field Effect Photodiode (FEPD) to overcome the inherent drawbacks of PIN (PIN-PD) and control output photocurrent. Also, proposed PIN-PD can be applied as fast optical switch that provides desired ION/IOFF ratio for applications in nanoscale regime. The combines Metal Semiconductor Transistor (MESFET) regular convert incident light with photon energy gr...

Modern medical microwave diagnostic equipment requires the use of solutions related to compactness developed devices and high performance. It is possible achieve set conditions with a modern semiconductor component base based on A3B5 compounds. The paper presents designs main control elements signal as part radiothermometer monolithic Al-GaN/GaN/SiC HEMT SPDT transistor switch MIC LNA basis pHE...