Two types of diodes designed for infrared applications were fabricated from SiGe/Si films grown using ultra high vacuum chemical vapor deposition. The first diode described is a PIN type design, where the I region is comprised of undoped Sil_xGex/Si multiple quantum wells. Photoluminescence and defect etching were used to assess the quality of the quantum well films, and electroluminescence and...

Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 μm, and the highest strained samples demonstrate in-plane, tensile strains of > 2 %, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present ...

Surface-textured structure is currently an interesting topic since it can efficiently reduce the optical losses in advanced optoelectronic devices via light management. In this work, we built a model in finite-difference time-domain (FDTD) solutions by setting the simulation parameters based on the morphology of the Si nanostructures and compared with the experimental results in order to study ...

The oxidation kinetics of 5 vol% nano-Ni dispersed Al2O3 with Si-doping (nano-Ni/Al2O3-Si) was studied in the present paper. The starting powder mixture was prepared by drying aqueous slurry consisting of alumina with nickel nitrate and Si (OCH3)4. The powder mixture was reduced at 600 C for 12 h in a stream of Ar-1%H2 gas mixture. Nano-Ni/Al2O3-Si was densified by pulsed electric current sinte...

The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This...

The channel fluorine implantation (CFI) process was integrated with the Si₃N₄ contact etch stop layer (SiN CESL) uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with the hafnium oxide/silicon oxynitride (HfO₂/SiON) gate stack. The SiN CESL process clearly improves basic electrical performance, due to induced uniaxial tensile strain within the channel. How...

Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si Schottky-gated MODFETs (Modulation-doped Field-Effect Transistor) was performed. The response of the strained-Si MODFET has been characterized...

Device and circuit simulations using process/physics-based Technology CAD tools are done to project the scaled CMOS speed-performance enhancement that can be expected from process-induced strained-Si CMOS.

: [email protected] .ac.cn (W. Han). Abstract The unique micro-sized (2–10 mm) Si/C composites consisting of 20 nm carbon coated secondary Si were synthesized from the abundant and low cost Al–Si alloy ingot by acid etching, ball-milling and carbonization procedure. The nano-porous Si/C composites provide a capacity of 1182 mAh g 1 at a current density of 50 mAg , 952 mAh g 1 at 200 mAg , 815 mAh g...