Organic electrochemical transistors (OECTs) based on Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and ionic-electronic transduction yield excellent potential for field of implantable or wearable sensing technology. However, depletion-mode operation PEDOT:PSS-based OECT...

An optimized doping process is used to achieve extremely-low threshold voltage (ELVT) FinFETs for low-power mmWave applications based on 12nm node technology platform. With the VTH ≈ 100mV ELVT FinFET shows 15% IEFF improvement at same VDD compared its super-low (SLVT) counterpart, while mismatch and reliability performances are comparable. FT/FMAX of 305GHz/ 315GHz comparable Maximum Stable Ga...

A pixel design for active matrix organic light emitting diode (AM-OLED) displays employing hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is proposed. The proposed pixel circuit, which composed of five TFTs and one capacitor, could compensate the shift of threshold voltage of OLED as well as the threshold voltage of a-Si:H. We fabricated the pixel circuits on the glass sub...

Many phenomenological models of the responses of simple cells in primary visual cortex have concluded that a cell's firing rate should be given by its input raised to a power greater than one. This is known as an expansive power-law nonlinearity. However, intracellular recordings have shown that a different nonlinearity, a linear-threshold function, appears to give a good prediction of firing r...

The transmembrane voltage induced due to applied electric field superimposes to the resting transmembrane voltage of the cell. On the part of the cell membrane, where the transmembrane voltage exceeds the threshold transmembrane voltage, changes in the membrane occur, leading to increase in membrane permeability known as electropermeabilization. This part of the cell membrane represents the per...

A detailed three-dimensional (3-D) statistical “atomistic” simulation study of fluctuation-resistant sub-0.1m MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1m generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with un...

Abstrac: In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters on threshold voltage was determined by using analysis of variance (ANOVA). The virtual f...