نتایج جستجو برای: threshold voltage

تعداد نتایج: 224819  

In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solu...

Damijan Miklavcic Gorazd Pucihar Hossein Mozdarani Leila Towhidi Seyed Mohammad Pourmir Firoozabadi, Tadej Kotnik

Introduction:  Electroporation  is  a  technique  for  increasing  the  permeability  of  the  cell  membrane  to  otherwise  non-permeate  molecules  due  to  an  external  electric  field.  This  permeability  enhancement  is  detectable if the induced transmembrane voltage becomes greater than a critical value which depends on the  pulse  strength  threshold.  In  this  study,  the  variabil...

Journal: :iranian journal of medical physics 0
leila towhidi ph.d. student, medical physics dept., tarbiat modares university, tehran, iran seyed mohammad pourmir firoozabadi associate professor, medical physics dept., tarbiat modares university, tehran, iran hossein mozdarani professor, medical genetics dept., tarbiat modares university, tehran, iran tadej kotnik associate professor, faculty of electrical engineering, university of ljubljana, ljubljana, slovenia gorazd pucihar post doc student, faculty of electrical engineering, university of ljubljana, ljubljana, slovenia damijan miklavcic professor, faculty of electrical engineering, university of ljubljana, ljubljana, slovenia

introduction:  electroporation  is  a  technique  for  increasing  the  permeability  of  the  cell  membrane  to  otherwise  non-permeate  molecules  due  to  an  external  electric  field.  this  permeability  enhancement  is  detectable if the induced transmembrane voltage becomes greater than a critical value which depends on the  pulse  strength  threshold.  in  this  study,  the  variabil...

This work studies the effects of dynamic threshold design techniques on the speed and power of digital circuits. A new dynamic threshold transistor structure has been proposed to improve performances of digital circuits. The proposed switched-capacitor dynamic threshold PMOS (SC-DTPMOS) scheme employs a capacitor along with an NMOS switch in order to effectively reduce the threshold voltage of ...

Journal: :international journal of nanoscience and nanotechnology 2014
m. azadmand k. arzani a. nemati n. riahi noori t. ebadzadeh

in this research the influence of adding sic on microstructure and electrical properties of zno-based nanocomposite varistors were investigated. sic was added with amounts of 10-0 mass% to zno-based varistor composition. it is found that sic allows reaching to high threshold voltage with formation of fine-grained zno.another important effect of adding sic is formation zn2sio4 (willemite) on the ...

A. Shahhoseini, K. Saghafi, M. K Moravvej-Farshi, R. Faez,

In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...

Journal: :International Journal of VLSI Design & Communication Systems 2012

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