نتایج جستجو برای: threshold voltage
تعداد نتایج: 224819 فیلتر نتایج به سال:
In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solu...
Introduction: Electroporation is a technique for increasing the permeability of the cell membrane to otherwise non-permeate molecules due to an external electric field. This permeability enhancement is detectable if the induced transmembrane voltage becomes greater than a critical value which depends on the pulse strength threshold. In this study, the variabil...
introduction: electroporation is a technique for increasing the permeability of the cell membrane to otherwise non-permeate molecules due to an external electric field. this permeability enhancement is detectable if the induced transmembrane voltage becomes greater than a critical value which depends on the pulse strength threshold. in this study, the variabil...
This work studies the effects of dynamic threshold design techniques on the speed and power of digital circuits. A new dynamic threshold transistor structure has been proposed to improve performances of digital circuits. The proposed switched-capacitor dynamic threshold PMOS (SC-DTPMOS) scheme employs a capacitor along with an NMOS switch in order to effectively reduce the threshold voltage of ...
in this research the influence of adding sic on microstructure and electrical properties of zno-based nanocomposite varistors were investigated. sic was added with amounts of 10-0 mass% to zno-based varistor composition. it is found that sic allows reaching to high threshold voltage with formation of fine-grained zno.another important effect of adding sic is formation zn2sio4 (willemite) on the ...
In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...
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