Advanced analysis features implemented in the Vienna Integrated System for TCAD Applications simulation environment are presented. These functionalities support automatic experiment generation (design of experiments), model fitting (response surface methodology), optimization, and calibration. They interact with the core modules of the framework supporting the simulation of the manufacturing pr...

We report the integration of inorganic nanotubes into metal-oxide-solution field effect transistors (FETs) which exhibit rapid field effect modulation of ionic conductance. Surface functionalization, analogous to doping in semiconductors, can switch the nanofluidic transistors from p-type to ambipolar and n-type field effect transistors. Transient study reveals the kinetics of field effect modu...

in this article different types of artificial neural networks (ann) were used for cntfet (carbon nanotube transistors) simulation. cntfet is one of the most likely alternatives to silicon transistors due to its excellent electronic properties. in determining the accurate output drain current of cntfet, time lapsed and accuracy of different simulation methods were compared. the training data for...

An improved analytical model for IGB power transistors has been developed for circuit simulators. Special attention is paid to the physical modeling of the short channel in the DMOS branch and the buffer layer near the anode in IGBT device structures. Good agreement between simulated and measured data has been obtained.

An extraction method for the parameters of a new analytical model of the submicron MOS transistor for analog applications is presented. The stages which form the extraction process are detailed, along with an original parameter extractor created in Labview, which uses the Levenberg-Marquardt fitting algorithm. Also presented are the results of the fitting of the model to experimental curves obt...