As in bulk amplifiers, the onset of nonlinear effects when amplifying ultra-short pulses in fiber amplifiers has been pointed out and investigated by several groups, specifically in erbium-doped fiber amplifiers ( EDFAs) [ l-3 1. Researchers have in fact used the Kerr nonlinearity in conjunction with group velocity dispersion in order to create even shorter pulses via higher-order soliton forma...

This paper aims to analyse the research trend of erbium-doped tellurite glasses. To this aim, applied bibliometric analysis. The comprehensive document on topic glasses in Scopus database is 695 documents. result revealed that scientific publication has been increasing. China contributed most documents visualization assisted with VOSviewer software and resulted four primary clusters: (1) red cl...

The double-pass erbium-doped zirconia fiber amplifier (EDZFA) is proposed and demonstrated to provide a wide-band amplification as well as flat-gain operation in both the Cand L-band regions using only a single-gain medium. The proposed amplifier utilizes an erbium-doped zirconia fiber (EDZF) with erbium ion concentration of 2800 ppm as a gain medium. The medium is fabricated in a ternary glass...

Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er3+ ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been investigated. Temperature quenching of the photoluminescence originating from the silicon nanocrystals and the erbium ions has be...

We demonstrate an enhanced multiwavelength L-band Brillouin-erbium fiber laser (BEFL), in which the Brillouin pump is pre-amplified before entering the single-mode fiber. The Brillouin pump pre-amplification provided by the Erbium-doped fiber has created higher intensity of Brillouin Stokes line generated in the single-mode fiber that leads to the homogenous gain saturation. Thus the built-up o...

Silicon microphotonics has emerged as the leading technology to overcome the interconnect bottleneck that limits a further increase of computation power following Moore's law. Optical interconnects between different electronic microprocessors in an electronic-photonic integrated circuit (EPIC) can provide a fast, low-loss and highbandwidth alternative to electrical interconnects, which suffer f...

A new concept for an infrared waveguide detector based on silicon is introduced. It is fabricated using silicon-on-insulator material, and consists of an erbium-doped p–n junction located in the core of a silicon ridge waveguide. The detection scheme relies on the optical absorption of 1.5m light by Er ions in the waveguide core, followed by electron–hole pair generation by the excited Er and s...

We report a widely tunable single-frequency linear-cavity erbium-doped fiber laser covering both the conventional wavelength band (C-band) and the long wavelength band (L-band). The laser has low threshold, high slope efficiency and high signal-to-noise radio. A large tuning range of over 100 nm is realized by optimization of the active fiber length.

Both the low cost and high capacity has become an increasingly significant aspect of network design. So this tutorial paper demonstrates a long reach hybrid WDM (wavelength division multiplexing)/TDM (time division multiplexing) PON (Passive optical network) system with dual pumped bidirectional Erbium doped fiber amplifier (EDFA). This architecture has a total reach of 115Km and EDFA provides ...

Integrated Al2O3:Er 3+ channel waveguide ring lasers were realized on thermally oxidized silicon substrates. High pump power coupling intoand low output power coupling fromthe ring is achieved in a straightforward design. Wavelength selection in the range 1532 to 1557 nm was demonstrated by varying the length of the output coupler from the ring. Keywords—waveguide laser; ring laser; erbium-dope...