We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2 nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2 nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction a...

In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD), chemical etching and atomic layer deposition (ALD). For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions) and the etching time have a si...

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments wit...

We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in pro...

CR-39 Solid State Nuclear Track Detecting foils (SSNTD), along with 1 mm thick polyethylene radiator, sealed in triple laminated pouches, are used for country wide Fast Neutron Personnel Monitoring in India. With the present system of processing by elevated temperature electrochemical etching (ETECE) and evaluation using automatic image analysis, only 16 foils are processed at a time and it is ...

Recently, porous materials on the base of semiconductor crystals arouse greater interest as photon crystals in terms of opto-electronic applications and formation of arrays of nano-elements with oneand zero-dimensionality. The crystals of porous silicon have been developed best to date. The obvious trends in this field now are towards using other materials for electrolytic etching, decreasing t...

A novel technique to establish atomic-sized contacts in metallic materials is shown. It is based on etching a (sub)micrometric electrode via a low-energy focused ion beam. The in situ measurements of the nanoconstriction resistance during the etching process permit control of the formation of atomic-sized constrictions with milling time, observing steps in the conductance in the range of the co...

background: the poly-allyl diglycol carbonate (padc) detector is of particular interest for development of a fast neutron dosimeter. fast neutrons interact with the constituents of the cr-39 detector and produce h, c and o recoils, as well as (n, α) reaction. these neutron- induced charged particles contribute towards the response of cr-39 detectors. material and methods: electrochemical etchin...

Semiconductor devices with shallow junctions can be fabricated using plasma immersion ion implantation. In this technique BF3 gas has been used as the boron dopant source due to its low toxicity. Not only are ions implanted but, because of the fluorine ions, there is etching and deposition at the wafer surface. Therefore, the relationship between total dose and processing time is not straightfo...