A simplified version of a RlSC microprocessor has been implemented with E/D MESFET DCFL in the Vitesse HGaAs II process. This chip was designed to drive the development of digital GaAs design automation tools. The processor architecture was modified to fit DCFL technology. The 60,500-transistor circuit executes a set of 29 basic instructions. It dissipates 11 W and operates at over 100 MHz. The...

Heterojunction Bipolar Transistors (HBTs) are considered excellent candidates for low phase noise millimeter wave applications. They exhibit outstanding high frequency performance and also low baseband noise compared to MESFET and HEMT devices. We have designed and demonstrated state-of-the art microwave and millimeter wave power HBTs using the baseline HBT process at HRL Laboratories. An HBT t...

The RF sections of Analog FM and Digital Radios primarily differ in the required linearity. If the transmitter amplifiers and attendant switching functions are not extremely linear, AM to AM and AM to PM conversion can cause serious deterioration of Bit Error Rate (BER) and an increase in intersymbol interference (ISI). Higher order QAM Systems such as 64-QAM and 256-QAM require even higher lev...

We present a compact single monolithic microwave integrated circuit (MMIC) transmitter module for four-channel RF/optical subcarrier multiplexed (OSCM) communication applications. The developed module consists of one fully monolithic four-channel OSCM transmitter integrated circuit (IC) and four coupled-line filters. The MMIC is designed and implemented in a commercial 0.6m GaAs MESFET process ...

| This work evaluates the features of a gallium arsenide E/D MESFET process in which a 32-bit RISC microprocessor was implemented. The design methodology and architecture of this prototype CPU are described. The performance sensitivity of the microprocessor and other large circuit blocks to diierent process parameters is analyzed, and recommendations for future process features, circuit approac...

This paper is an extension of work done previously on the comparison of non-linear MESFET models [1,2]. Models that are compared include Curtice Quadratic, Curtice Cubic, Statz, Materka, Advanced Materka, Angelov, Alpha Dispersion and TOM3. The DC, C-V and IMD3 characteristics of each model are compared at different temperatures. The comparison is based on a) the relative error between the meas...