Understanding noise in submicron MOS devices is an ongoing challenge in the area of mixedsignal modeling. Experimental observations show that the classical long-channel MOSFET noise formulation underestimates the drain current noise of short-channel devices by a factor often referred to as the excess noise factor. The numerical value of this factor is still a matter of controversy, raising ques...

This paper proposes a digital hardware control of Permanent Magnet Synchronous Motor (PMSM) using a SiC MOSFET inverter implemented in a FPGA (Field Programmable Gate Array) device. High frequency is required using a SiC MOSFET inverter to obtain high response and good stability for speed control systems. Not only the switching frequency of inverter, but also the control frequency is achieved u...

A health monitoring system (HMS) involving a blood extraction device with a new type of hybrid biosensor comprising an enzyme and a semiconductor has recently been developed. A MOSFET was used as the transducer. The gate electrode was extracted from the MOSFET using a cable. Gold (Au)-plate-immobilized glucose oxidase (Go) was used as a biosensor and attached to the gate electrode. Go was immob...

Silicon carbide (SiC) based devices perform very well in severe environments and show excellent device characteristics at very high temperatures and in high radiation environments. An analytical model for a lateral MOSFET that includes the effects of temperature variation in 6H–SiC poly-type has been developed. The effects of elevated ambient and substrate temperatures (300–600 K) on the electr...

Single Event Burnout (SEB) in power MOSFETs is of major concern with regard to the suitability of the MOSFET for space missions and other high particle radiation environments. Large efforts have been made to deeply understand this phenomenon, in order to develop power MOSFETs which are less sensitive to SEB [1], [2]. When an ion hits the MOSFET source, amplification of an inherent parasitic bip...

In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degra...

An analytical model for lateral MOSFET that includes the effects of temperature variation in 4Hand 6H-SiC poly-type is presented in this paper. SiC shows a tremendous potential for high temperature electronics applications [1-4]. The model includes the effects of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact regi...

Abstract The UIS characteristic of the device is a key parameter super-junction MOSFET, which represents reliable performance in face extreme conditions. maximum avalanche energy ( E AS ) that can withstand under single pulse gate electrode or AR multiple pulses commonly used industry to characterize characteristic. To solve problem we propose novel structure MOSFET with P-type diffused region ...

Proper analytical physically based model to predict fluctuations in the threshold voltage due to a single interface trap at a random location along the channel in a typical sub-50 nm MOSFET is of utmost significance. This research summary compares the efficacy of the existing analytical model based on dopant number fluctuation estimation in the channel of a MOSFET when compared to 3D Ensemble M...

In this study, a three-dimensional “atomistic” circuitdevice coupled simulation approach is advanced to investigate the process-variation and random dopant induced characteristic fluctuations in planar metal-oxidesemiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. As the gate length of the planar MOSFETs scales from 65 nm to 16 nm, ...