In this paper, we present the fabrication of nano optical elements by means of deep reactive ion etching technique (Bosch process) on a silicon-on-insulator substrate. The nano structures are fabricated in a two step process. The first step consists of direct-writing nanoscale patterns on PMMA polymer by electron beam lithography. These nano patterns are then transferred to the silicon surface ...

This paper presents processes for glass micromachining, including sandblast, wet etching, reactive ion etching (RIE), and glass reflow techniques. The advantages as well as disadvantages of each method are presented and discussed in light of the experiments. Sandblast and wet etching techniques are simple processes but face difficulties in small and high-aspect-ratio structures. A sandblasted 2...

The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPGTM polysiloxane thin films. The use of a silica mask and CHF3 /O2 etch gas led to large etch selectivity between the silica and IPGTM of !20 and etch rates of !100 nm /min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication app...

The interaction of plasmas with surfaces is dominated by synergistic effects between incident ions and radicals. Film growth is accelerated by the ions, providing adsorption sites for incoming radicals. Chemical etching is accelerated by incident ions when chemical etching products are removed from the surface by ion sputtering. The latter is the essence of anisotropic etching in microelectroni...

We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF(6), optimized for the formation of deep nanopores. We have realized structures with pitches between 440 ...

Abstract The effect of HI and O2 plasma treatments on Ge surface is studied by X-ray photoelectron spectroscopy. oxide can be effectively removed at room temperature remote in inductively coupled reactive ion etching system without substrate bias. re-oxidation oxide-free plasma-treated has been performed sequentially plasma. By utilizing treatment cyclically, we have proved the viability digita...

SAW devices are routinely frequency trimmed at the wafer level prior to the dicing process so to improve yield at the assembly level. The trimming can be achieved by using wet etching, reactive ion etching, ion beam milling, and other methods. It is also possible to trim the frequency of patterned SAW wafer by depositing dielectric thin films on the wafer but this method is usually done for the...