Device simulation has two main purposes: to understand and to depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of the next device generation. Towards these goals, the quality of the implemented physical models is decisive, forcing heuristic t models to be replaced by \\rst-principle"-based models. Since transport schemes using moments o...

This paper presents a comprehensive review of diamond electronics from the RF perspective. Our aim was to find and present the potential, limitations and current status of diamond semiconductor devices as well as to investigate its suitability for RF device applications. While doing this, we briefly analysed the physics and chemistry of CVD diamond process for a better understanding of the reas...

Designing high-performance semiconductor devices is a complex optimization problem, which is characterized by multiple and, often, conflicting objectives. In this research work, we introduce a multi-objective optimization design approach based on the Bi-Objective Mesh Adaptive Direct Search ( BiMADS) algorithm. First, we assess the performance of the algorithm on the design of a n+ − n− n+ sili...

The development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivity and three-dimensional spatial resolution of APT makes it uniquely capable of addressing challenges resulting from the continued shrinking of sem...

We present results from a three-dimensional device simulator, using adaptive meshing and solving the drift-diffusion equations. The adaption algorithm and the criteria used for adap-tion are discussed. Three devices of industrial interest are presented: a bipolar transistor, a 1.25/zm n-MOS device and a CCD, illustrating the range of devices which may be successfully simulated.

me usefulness and capabilities of photoelectrochemical processing of III-V semiconductors is presented. Examples include the etching of small period gratings, the formation of integral lenses, the decomposition of small bandgap semiconductors, the etching of ptype semiconductors, and the photoinitiated deposition of metal. The transport of carriers in the semiconductor and reactivity of the sur...

The keynote panel discussion for the June 1978 Computer Elements Workshop focused on the implications of increased scale of integration in devices for the computer business. Sessions at the workshop, sponsored by the IEEE Computer Society's Technical Committee on Computer Elements, examined trends in memory, LSI design, emerging logic technologies, packaging, and testing. Device designers see a...