We report a facile approach for the preparation of the vertically aligned, large scale CdS/p-Si shell/core nanowire heterojunction arrays based on successive ionic layer adsorption and reaction deposition. The results indicate that the rectifying characteristics of CdS/Si shell/core nanowire arrays can be tailored by changing the number of SILAR cycles, and the CdS/Si shell-core nanowire hetero...

We provide evidence of nanopatterning-induced bending of an ultrathin tensile strained silicon layer directly on oxide. This strained layer is achieved through the epitaxial growth of silicon on a Si(0.84)Ge(0.16) virtual substrate and subsequent transfer onto a SiO(2)-capped silicon substrate by combining hydrophilic wafer bonding and the ion-cut process. Using high resolution transmission ele...

strained Si materials L. O’Reilly, K. Horan, P. J. McNally, N. S. Bennett, N. E. B. Cowern, A. Lankinen, B. J. Sealy, R. M. Gwilliam, T. C. Q. Noakes, and P. Bailey Nanomaterials Processing Laboratory, Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland School of Electrical, Electronic and Computer E...

The fabrication and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity between the hot and the cold junctions, and by providing selective emission of hot carriers through thermionic emission. The structure of the samples consisted of a 3 μm thick symmetrica...

Ge and B diffusion was studied in nano-crystalline Si, and Pd and Si self-diffusion was studied in nano-crystalline Pd2Si during and after Pd/Si reactive diffusion. These experiments showed that grain boundary (GB) diffusion kinetic is the same in microand nano-GBs, whereas triple junction (TJ) diffusion is several orders of magnitude faster than GB diffusion. In addition, GB segregation and GB...

Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 10(2)-10(3) times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, the growth of a compressive SiGe film is rather different from that of a tensile film. The di...

In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used f...

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si s...

In this work, local AFM oxidation technique in a controlled humidity environment has been used to create small features in strained SiGe alloys. When directly oxidizing SiGe alloys, minimum line widths of 20nm were achieved by adjusting parameters such as the bias voltage on the microscope tip and the tip writing speed. It was found that when bias voltage increases, and/or when the tip writing ...

The subband structure of silicon nanowires has gained much interest recently. Nanowires with diameters below 10 nm are predicted to have a significantly altered subband structure compared with bulk silicon. The effective mass approximation fails to describe these alterings correctly, and so far the semiempirical tight binding method and first principles calculations were used to investigate the...