BACKGROUND Cardiac resynchronization therapy (CRT) demands high energy utilization due to continuous biventricular pacing. Current technology allows 6 pacing configurations for a bipolar left ventricular (LV) lead. Understanding the energy requirements for each configuration will allow optimization of pacing output. METHODS AND RESULTS Pacing impedance, LV voltage threshold at 1.5 ms (rheobas...

Local dC/dV spectroscopy performed in a scanning capacitance microscope is used to map, quantitatively and with high spatial resolution, lateral variations in the threshold voltage of an AlxGa12xN/GaN heterostructure field-effect transistor epitaxial layer structure. Theoretical analysis and numerical simulations are used to quantify charge concentrations, the corresponding threshold voltage sh...

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET’s with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) “atomistic” simulation technique described elsewhere [1]. MOSFET’s with uniform channel doping and with low doped epitaxial channe...

DRIVING eGaN® FETS When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...

DriviNG eGaN® FETs When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...

The effect of surface roughness on the Seebeck coefficient in the sub-50-nm scale silicon ultra thin films is investigated theoretically using nonequilibrium Green's function formalism. For systematic studies, the surface roughness is modelled by varying thickness periodically with square wave profile characterized by two parameters: amplitude (A 0) and wavelength (λ). Since high Seebeck coeffi...

We tested the electrical characteristics of an oligo phenylene ethynylene OPE molecule with one nitro side group, an OPE with two nitro side groups, and an OPE with no nitro side groups in our nanowell device. The OPE molecule with nitro side group s showed switching behavior with memory as well as nonreversible negative differential resistance NDR . Current-voltage I-V characteristics showed a...

Multiple-threshold CMOS circuit, which has both high and low threshold transistors in a single chip, can be used to deal with the leakage problem in low voltage low power (LVLP) and high performance applications. The high threshold transistors can suppress the subthreshold leakage current, while the low threshold transistors are used to achieve the high performance. In this paper, we will intro...

A resistorless CMOS nonbandgap voltage reference, which is compatible with 180nm CMOS Technology is presented in this paper. In order to reduce the temperature nonlinearity in proposed voltage reference, threshold voltage and a proportional to absolutely temperature (PTAT) voltage form the basic linear temperature components, which are achieved by resistorless threshold voltage extractor and di...

A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a bodybiasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells, a current-compensat...