We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO2/Al2O3-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, the device exhibits a typical bipolar, reliable, and reproducible resistive switching behavior. After a 104...

and backward-scan effects in SiOx-based resistive switching memory Yao-Feng Chang, Li Ji, Yanzhen Wang, Pai-Yu Chen, Fei Zhou, Fei Xue, Burt Fowler, Edward T. Yu, and Jack C. Lee Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA PrivaTran, LLC, 1250 Capital of Texas Highway South, Bldg 3, Ste 400, Aus...

We demonstrate a spray pyrolysis method to grow carbon nanotubes (CNTs) with high degree of crystallinity, aspect ratio and degree of alignment on a variety of different substrates, such as conventional steel, carbon fibres (CF) and ceramics. The process consists in the chemical vapour deposition of both a thin SiO2 layer and CNTs that subsequently grow on this thin layer. After CNT growth, inc...

The investigations of Pd/Ge/Au contact system forming regimes influence on the specific resistivity to n-type conductivity GaAs layer were carried out. method samples surface treatment before layers evaporation and thermal annealing in H 2 , N Ar atmosphere parameters was investigated. value (2-3)· 10 -6 Ohm· cm at reduced temperature 190 o C archived.. Keywords: Pd/Ge/Au, n-GaAs, treatment,

We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. In contrast to other work in the literature, switching occurs in ambient cond...

ReRAM has been considered as a promising candidate to overcome scaling limits of the conventional FLASH memory due to its superior performance. To realize the high density memory, 3D cross-point array or vertical ReRAM are necessary [1]. To integrate cross-point (4F) ReRAM device array, we need to develop bi-directional selector device to suppress the sneak current path through the unselected d...

A rapid and sensitive HPLC method has been developed for the quantification of mirtazapine (MRZ), a noradrenergic and specific serotonergic inhibitor antidepressant (NaSSA) and its two major metabolites N-desmethylmirtazapine (NDM) and 8-hydroxymirtazapine (8-OHM) in human plasma. The separation was achieved using Chromolith C18 column and a mobile phase of acetonitrile: phosphate buffer (pH=3,...

The results of field tests have shown, that the behaviour of the restriking earthfault in a cable is completely different in isolated and well-tuned compensated networks. In this paper, the differences will be considered in detail and the impact on the earthfault detection and the control of the Petersen-Coil will be explained. Due to the different behaviour, there are new possibilities to redu...