نتایج جستجو برای: epitaxy
تعداد نتایج: 8455 فیلتر نتایج به سال:
-The low temperature homoepitaxial growth of silicon has been probed iii situ by Reflection High Energy Electron Diffraction jRHEED) in a Molecular Beam Epitaxy jMBE)
van der Waals epitaxy of TMDCs and their applications.
Approved: ____________________________________ Thesis Supervisor ____________________________________ Title and Department ____________________________________ Date 1 INVESTIGATIONS INTO MOLECULAR BEAM EPITAXIAL GROWTH OF INAS/GASB SUPERLATTICES by Lee Michael Murray A thesis submitted in partial fulfillment of the requirements for the Doctor of Philosophy degree in Physics in the Graduate Coll...
We investigated the origin of broad luminescence observed from an array of site-controlled InGaN nanodots grown by selective area epitaxy (SAE). Epitaxially grown site-controlled nanodots with lateral dimensions <50 nm and an array density of 10 cm 2 have been studied. During the nanoscale SAE, incorporation of adatoms from the SiO2 mask has greater relative importance, resulting in a non-unifo...
It is a well-known problem in molecular beam epitaxy (MBE) that the real sample temperature is in most cases unknown during the growth process. We have used a commercial band-edge absorption spectroscopy system to determine the sample temperature during bake-out and growth of different types of samples. Time-resolved in-situ measurements show how the sample temperature is influenced by differen...
Remote epitaxy is a recently discovered type of epitaxy, wherein single-crystalline thin films can be grown on graphene-coated substrates following the crystallinity substrate via remote interaction through graphene. Although provides pathway to form freestanding membranes by controlled exfoliation film at graphene interface, implementing not straightforward because atomically precise control i...
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