Articles you may be interested in Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Very low threshold single quantum well gradedindex separate...

Articles you may be interested in Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy Appl. Optical properties of Si-and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy J. In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN Appl. Magnetic properties of Mn x Ti 1 − x ...

Articles you may be interested in High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111) Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Appl.

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while deliverin...

Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable...

Silicon epitaxy on hydrogen-terminated Si(001) surfaces has been studied using molecular dynamics simulations. Epitaxy on the dihydride-terminated Si(001 )-( 1 × 1) surface is inhibited for Si atoms at thermal energies due to strain hindrances created by hydrogen. At greater incident Si atom energies (2-10 eV), epitaxy proceeds primarily through "subplantation", i.e. subsurface implantation of ...

The preparation of crystalline materials on incommensurate substrates has been a key topic of epitaxy. van der Waals (vdW) epitaxy on two-dimensional (2D) materials opened novel opportunities of epitaxial growth overcoming the materials compatibility issue. Therefore, vdW epitaxy has been considered as a promising approach for the preparation of building blocks of flexible devices and thin film...

As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization. Here we demonstrate van der Waals epitaxy in solution phase synt...

Articles you may be interested in Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001)...

Articles you may be interested in Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy Effects of different plasma species (atomic N, metastable N 2 * , a...