Semiconductor nanowires have been explored as alternative electronic materials for high performance device applications exhibiting low power consumption specs. Electrical transport in III-V nanowire (NW) field-effect transistors (FETs) is frequently governed by Schottky barriers between the source/drain and the NW channel. Consequently the device performance is greatly impacted by the contacts....

We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.

We report that silicon shows large positive magnetoresistance (MR) between 0 and 3 T more than 1,000 per cent at 300 K and 3,000 per cent at 25 K. The experiment on lightly doped silicon reveals that when the carrier density decreases below 10 cm the MR becomes pronounced due to the space-charge effect. We propose that the quasi-neutrality breaking of the space-charge effect can introduce elect...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...

Investigations of Tunneling for Field Effect Transistors

Optical and electronic devices for optoelectronic integrated circuits have been extensively studied, and now, more efforts for the conversion between optical and electrical signals are accordingly required. In this work, a silicon (Si)-compatible optically drivable III-V-on-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is studied by simulation. The proposed optoelectronic device...

The discovery of semi-conducting organic materials has opened new possibilities for electronic devices and systems because of their solution processibility, lightweight and flexibility compared to inorganic semiconductors. The combination of semiconductors with electrolytes, and more especially organic semiconductors and solid electrolytes has attracted the attention of researchers because of t...

The emergence of ignition device of semiconductor bridge provides a way to resolve the conflict between low energy and high promptness, reliability and safety of initiating explosive device. But with the rapid development of arms and ammunition, the higher demand of miniaturization for structure and volume in design of initiating explosive device is put forward based on high safety, reliability...