The unambiguous measurement of carrier concentration and mobility in semiconductor nanowires remains a challenging task. This is a consequence of their one-dimensional nature and the incompatibility with Hall or van der Pauw measurements. We propose a method that allows the direct determination of mobility and carrier concentration in nanowires in a contact-less manner. We demonstrate how forwa...

The temperature dependent Hall mobility data from La-doped SrTiO3 thin films are analyzed and modeled considering various electron scattering mechanisms. We find that a ∼6 meV transverse optical phonon deformation potential scattering mechanism is necessary to explain the dependence of transport on temperature between 10–200 K. Also, we find that the low temperature electron mobility in intrins...

The authors find evidence of income convergence across all substate labor markets in the lower forty-eight U.S. states during the 1969 to 1999 period. However, convergence is not expressed in a uniform way across metropolitan/nonmetropolitan regions, across time periods, or across census regions. The authors show that catching up within the distribution is more common for nonmetropolitan region...

In this data article, we presented the structural, optical, and electrical data of the nanodisk-shaped SnS layers. A facile formation of orthorhombic SnS derived from SnS2 particles was discussed in our previous study (Patel et al., 2017) [1]. The data includes the standard XRD patterns supercell structure of the Orthorhombic SnS material, the photograph of prepared samples, thickness dependent...

The influence of MOCVD growth conditions (carrier gas, growth temperature, and V/III ratio) on the AlGaN barrier and the corresponding 2DEG for AlGaN/GaN heterostructures grown on 150 mm silicon is investigated. Hall mobility 2200 cm 2 /V.s, with sheet carrier concentration 8.7e10 12 cm -2 and sheet resistance 326 Ohm/sq, is obtained for AlGaN grown in N2 ambient and with high V/III ratios.

We describe a new effect in semiconductor spintronics that leads to dissipationless spin currents in paramagnetic spin-orbit coupled systems. We argue that in a high-mobility two-dimensional electron system with substantial Rashba spin-orbit coupling, a spin current that flows perpendicular to the charge current is intrinsic. In the usual case where both spin-orbit split bands are occupied, the...

where d = thickness of the film, ,o = resistivity of the film, = resistivity of the bulk material having the same structure and approximately the same number of defects as the films, l0 = mean free path of the charge carriers. The values of l0 calculated by the two methods were found to agree satisfactorily. Figs. 7 and 8 show the variation of the Hall mobility (/̂ H) with film thickness and sub...

Recent magnetotransport experiments on high mobility two-dimensional electron systems have revealed many-body electron states unique to high Landau levels. Among these are reentrant integer quantum Hall states which undergo sharp transitions to conduction above some threshold field. Here we report that these transitions are often accompanied by narrow- and broad-band noise with frequencies whic...

Graphene holds considerable promise for novel applications in spintronics and quantum information processing because it has a high degree of electron mobility and gate tunability. Yet it also suffers from inherent drawbacks. For example, its lack of an energy band gap limits its capacity to be used in conventional charge-based semiconductor devices, and its extremely small spin-orbit (SO) inter...

We derive sufficient conditions for advection-driven backward motion of the free boundary in a chemotaxis model with degenerate mobility. In this model, a porous-medium-type diffusive term and an advection term are in competition. The former induces forward motion, the latter may induce backward motion of the free boundary depending on the direction of advection. We deduce conditions on the gro...