9 The co-integration of piezoelectric actuation and sensing capabilities on 10 microelectromechanical system-based resonators can be a source of electrical cross-talk that, if not 11 properly taken into account, may dramatically affect the interpretation of the device’s output. In this 12 paper, we identify three parasitic electrical effects pertaining to the most commonly used piezoelectric 13...

Abstract: We proposed a concept of balanced switching converter circuit, which is an effective way to reduce the common-mode conducted noise by current cancellation. In this paper, the path of the noise current in a balanced boost converter circuit is investigated using a current probe. By measuring current waveforms and frequency spectra of the parasitic capacitances and the frame ground line,...

A proposed third order noise shaping accelerometer interface circuit enhances the SNR compared with the previ ously presented interface circuits The solution for the two chip implementation is described and a novel cross coupled CDS integrator is proposed This scheme functions even with the large parasitic capacitances between the sensor and the interface circuit The op amp noise is rst order s...

The SiC MOSFET has lower conduction loss and switching than the Si IGBT, which helps to improve efficiency power density of converter, especially for those having strict requirements volume weight, example, electrical vehicles (EVs), on-board chargers (OBCs), traction drive systems (TDS). However, faster speed will cause overshoot oscillation problems, affect security devices electronic systems...

In this paper, a new three-winding planar transformer design with the integrated leakage inductor is proposed for triple-active-bridge converter. It enables two output voltage levels: high (HV) port and low (LV) port. The primary secondary windings are split unevenly in both side legs while tertiary winding connected parallel. unique configuration enables: (i) enhanced efficiency volume; (ii) s...

This paper deals with the simulation of a high gain triode stage of a guitar amplifier. Triode models taking into account various “secondary phenomena” are considered and their relevance on the stage is analyzed. More precisely, both static and dynamic models (including parasitic capacitances) are compared. For each case, the stage can be modeled by a nonlinear differential algebraic system. Fo...

signed using 3 identical CNTFET, while resistors represent parasitic elements. The further fourth NOT gate has been used only to load the third stage. We have simulated the circuit driven by a 14ps clock, also in this case the CNT quantum inductance is negligible since the magnitude of the inductive reactance is much smaller than the resistances RD, RS. In the above simulations quantum capacita...